Multilayer Chip Power Inductors

Features

●  Low profile and thin thickness(h=0.5mm min.)

High DC bias characteristics by using high performance ferrite material
●  Low DC resistance
Monolithic structure for high reliability
●  Excellent solderability and high heat resistance
No cross coupling due to magnetic shield

Applications

Multilayer chip power inductors are widely used in DC-DC converter circuits for mobile phones, MIDs,  DSCs, DVCs, HDDs, PDAs, etc. Due to the properties of low DC resistance and high DC bias characteristics, they can improve the efficiency and decrease the ripple of output voltage.

Electrical Characteristics

Part Number

Inductance

L Test Freq.

Min. Self-resonant

Frequency

DC Resistance

Max.

Rated Current

Thickness

Units

μH

MHz

MHz

Ω

mA

mm [inch]

Symbol

L

Freq.

S.R.F

DCR

Ir*

T

MPL2012SR47DT

0.47

1

100

0.12±25%

1100

0.5±0.1

[.020±.004]

MPL2012S1R0DT

1.0

1

60

0.19±25%

800

MPL2012S1R5DT

1.5

1

50

0.26±25%

700

MPL2012S2R2DT

2.2

1

40

0.34±25%

600

MPL2012SR47HT

0.47

1

100

0.09±25%

1200

0.9±0.1

[.035±.004]

MPL2012S1R0HT

1.0

1

60

0.11±25%

1000

MPL2012S1R5HT

1.5

1

50

0.16±25%

900

MPL2012S2R2HT

2.2

1

40

0.25±25%

800

MPL2012S3R3HT

3.3

1

30

0.19±25%

900

MPL2012S4R7HT

4.7

1

30

0.25±25%

800

MPL2016SR47HT

0.47

1

100

0.06±25%

1600

MPL2016S1R0HT

1.0

1

70

0.09±25%

1400

MPL2016S1R5HT

1.5

1

60

0.11±25%

1200

MPL2016S2R2HT

2.2

1

50

0.11±25%

1200

MPL2016S3R3HT

3.3

1

40

0.12±25%

1200

MPL2016S4R7HT

4.7

1

30

0.14±25%

1100

MPL2520SR47HT

0.47

1

100

0.04±25%

1800

MPL2520S1R0HT

1.0

1

60

0.06±25%

1600

MPL2520S1R5HT

1.5

1

50

0.07±25%

1500

MPL2520S2R2HT

2.2

1

40

0.08±25%

1300

MPL2520S3R3HT

3.3

1

30

0.10±25%

1200

MPL2520S4R7HT

4.7

1

25

0.11±25%

1100

MPL2520S1R0WT

1.0

1

70

0.09±25%

1500

1.1±0.1

[.043±.004]

MPL2520S2R2WT

2.2

1

40

0.12±25%

1000

MPL2520S3R3WT

3.3

1

30

0.12±25%

1000

MPL2520S4R7WT

4.7

1

25

0.14±25%

900

: Please specify the inductance tolerance code (M=±20%, N=±30%)

*  : Definition of Ir: DC current causes temperature rise of 40 from 20 ambient

 

Future Development Plan

●  Small size products such as 1.6mm×0.8mm and 1.0mm×0.5mm;
●   Low thickness products such as 0.55mm and 0.35mm;
●  Further Improvement of DC bias characteristic by adjusting ferrite material and optimizing electrode structure.

CEATEC JAPAN 2011

Date: October 4th-8th, 2011

Location: 2-1, Nakase, Mihama-ku, Chiba-city, 261-0023 Japan

Booth: 6E35